 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| AP86T02GH/J RoHS-compliant Product Advanced Power Electronics Corp. Simple Drive Requirement Low On-resistance Fast Switching Characteristic G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 25V 6m 75A Description G The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP86T02GJ) is available for low-profile applications. G DS TO-252(H) D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V3 Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 25 +20 75 62 300 75 0.5 -55 to 175 -55 to 175 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 2 110 Units /W /W Data & specifications subject to change without notice 1 200808159 AP86T02GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min. 25 1 - Typ. 0.02 42 23 5 14 11 105 32 8 490 360 1.1 Max. Units 6 10 3 1 250 +100 37 V V/ m m V S uA uA nA nC nC nC 1.6 ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Static Drain-Source On-Resistance VGS=10V, ID=45A VGS=4.5V, ID=30A VDS=VGS, ID=250uA VDS=10V, ID=30A VDS=25V, VGS=0V Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Drain-Source Leakage Current (Tj=175 C) o VDS=20V, VGS=0V VGS=+20V ID=30A VDS=20V VGS=4.5V VDS=10V ID=30A RG=3.3,VGS=10V RD=0.3 VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 1830 2930 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 Test Conditions IS=45A, VGS=0V IS=20A, VGS=0V, dI/dt=100A/s Min. - Typ. 28 15 Max. Units 1.3 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Drain-Source Avalanche Ratings Symbol EAS Parameter Drain-Source Avalanche Energy 4 Test Conditions ID=24A, VDD=20V, L=100uH Min. - Typ. - Max. Units 29 mJ Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Package limitation current is 75A . 4.Single Pulse Test. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP86T02GH/J 200 120 T C =25 C ID , Drain Current (A) 150 o 100 ID , Drain Current (A) 10V 7.0V 5.0V 4.5V T C = 175 C 90 o 10V 7.0V 5.0V 4.5V 60 V G = 3 .0V 30 50 V G =3.0V 0 0 1 2 3 4 5 0 0 1 2 3 4 5 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 16 1.8 I D =30A T c =25 I D =45A V G =10V Normalized RDS(ON) 2 4 6 8 10 12 1.4 RDS(ON) (m) 8 1.0 4 0.6 25 50 75 100 125 150 175 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.2 30 20 T j =175 o C T j =25 o C Normalized VGS(th) (V) 1.2 0.8 Is (A) 10 0.4 0 0.0 0 0.2 0.4 0.6 0.8 1 25 50 75 100 125 150 175 V SD , Source-to-Drain Voltage (V) T j ,Junction Temperature ( C) o Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP86T02GH/J f=1.0MHz 16 10000 VGS , Gate to Source Voltage (V) I D =30A 12 C (pF) 8 V DS =10V V DS =15V V DS =20V C iss 1000 4 C oss C rss 0 100 0 10 20 30 40 50 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS ,Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 1 Normalized Thermal Response (Rthjc) Duty factor=0.5 100 0.2 ID (A) 0.1 0.1 0.05 1ms 10 PDM 0.02 0.01 t T Duty factor = t/T Peak Tj = PDM x Rthjc + T C T c =25 C Single Pulse 1 0.1 1 10 o 10ms 100ms 1s DC 100 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 120 40 V DS =5V ID , Drain Current (A) 30 2.8V 3V 3.2V 3.5V 3.8V 80 T j =25 o C T j =175 o C RDS(ON) (m) 20 40 4.2V 10 4.5V 10V 0 0 2 4 6 0 0 20 40 60 80 100 V GS , Gate-to-Source Voltage (V) I D (A) Fig 11. Transfer Characteristics Fig 12. Drain-Source On Resistance 4 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-252 D D1 SYMBOLS Millimeters MIN NOM MAX A2 A3 B1 D D1 E3 1.80 0.40 0.40 6.00 4.80 3.50 2.20 0.5 5.10 0.50 -0.35 2.30 0.50 0.70 6.50 5.35 4.00 2.63 0.85 5.70 1.10 2.30 0.50 2.80 0.60 1.00 7.00 5.90 4.50 3.05 1.20 6.30 1.80 -0.65 E2 E3 E1 F F1 E1 E2 e C B1 F1 F 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. e e A2 R : 0.127~0.381 A3 (0.1mm C Part Marking Information & Packing : TO-252 Part Number Package Code meet Rohs requirement 86T02GH LOGO YWWSSS Date Code (YWWSSS) YLast Digit Of The Year WWWeek SSSSequence 5 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-251 D A Millimeters SYMBOLS c1 D1 A A1 B1 E1 E B2 MIN NOM MAX 2.20 0.90 0.50 0.60 0.40 0.40 6.40 5.20 6.70 5.40 ---5.88 2.30 1.20 0.69 0.87 0.50 0.50 6.60 5.35 7.00 5.80 2.30 6.84 2.40 1.50 0.88 1.14 0.60 0.60 6.80 5.50 7.30 6.20 ---7.80 c c1 D A1 B2 B1 F D1 E E1 e F 1.All Dimensions Are in Millimeters. c 2.Dimension Does Not Include Mold Protrusions. e e Part Marking Information & Packing : TO-251 Part Number 86T02GJ YWWSSS meet Rohs requirement for low voltage MOSFET only Package Code LOGO Date Code (YWWSSS) Y Last Digit Of The Year WW Week SSS Sequence 6 |
Price & Availability of AP86T02GH
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |